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never stop thinking. power management & drives control integrated power system (cipos?) IKCS22F60AA ikcs22f60ab http://www.infineon.com/cipos data sheet, preliminary, sept. 2007
cipos? IKCS22F60AA, ikcs22f60ab preliminary data sheet 2/17 rev. 1.2, sept. 2007 revision history: 2007-10 rev.1.2 previous version: 1.1 page subjects (major changes since last revision) 12 changed switching energies for vdc = 300 v authors: o. hellmund, w. scholz, w. frank edition 2007-07 published by infineon technologies ag 85579 neubiberg, germany ? infineon technologies ag 10/8/07. all rights reserved. attention please! the information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office or representatives ( http://www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office or representatives. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. trenchstop ? is a registered trademark of infineon technologies ag. cipos? , coolmos? , coolset? , duopack? , emcon? and thinq!? are trademarks of infineon technologies ag.
cipos? IKCS22F60AA, ikcs22f60ab preliminary data sheet 3/17 rev. 1.2, sept. 2007 table of contents cipos? control inte grated power system ........................................................................................ ..........4 features ............................................................................................................................... .........................4 target applications ............................................................................................................................... ......4 description ............................................................................................................................... ....................4 system configuration ............................................................................................................................... ..4 internal electrical schematic.................................................................................................. .........................5 pin assignment................................................................................................................. ................................6 pin description ............................................................................................................................... .............6 /hin1,2,3 and /lin1,2,3 (low side and high side control pi ns, pin 15 - 20) ................................................6 en (enable, pin 24) ............................................................................................................ .........................7 itrip (over-current detection function, pin 21) ................................................................................ ..........7 vdd, vss (control side supply and reference, pin 22, 23) ....................................................................... ..7 vb1,2,3 and vs1,2,3 (high side supplie s, pin 1, 2, 4, 5, 7, 8) ................................................................. ...7 vru, vrv, vrw (low side emitter, pin 12, 13, 14) ............................................................................... .....7 v+ (positive bus i nput voltage, pin 10) ........................................................................................ ................7 absolute maxi mum ra tings ....................................................................................................... ......................8 module section ............................................................................................................................... .............8 igbt and diode section ..............................................................................................................................8 control section ............................................................................................................................... .............9 recommended operat ion condi tions ............................................................................................... .............9 static parameters.............................................................................................................. ..............................10 dynamic parameters ............................................................................................................. .........................11 integrated compone nts .......................................................................................................... .......................12 circuit of a typi cal application ............................................................................................... ......................12 test circuits .................................................................................................................. ..................................14
cipos? IKCS22F60AA, ikcs22f60ab preliminary data sheet 4/17 rev. 1.2, sept. 2007 cipos? c ontrol i ntegrated po wer s ystem single in-line intelligent power module 3 -bridge 600v / 22a @ 25c features ? fully isolated single in-line molded module ? infineon trenchstop ? igbts with lowest v ce(sat) ? optimal adapted emcon? diode for low emi ? soi gate driver with bootstrap diode and capacitor ? rugged soi gate driver technology with stability against transient and negative voltage ? temperature monitor and over temperature shutdown ? overcurrent shutdown ? undervoltage lockout at all channels ? matched propagation delay for all channels ? low side emitter pins accessible for all phase current monitoring (open emitter) ? cross-conduction prevention ? lead-free terminal plating; rohs compliant ? qualified according to jedec 1 (high temperature stress tests for 500h) for target applications target applications ? washing machines ? consumer fans and consumer compressors 1 j-std-020 and jesd-022 description the cipos? module family offers the chance for integrating various power and control components to increase reliability, optimize pcb size and system costs. this sil-ipm is designed to control ac motors in variable speed drives for applications like air conditioning, compressors and washing machines. the package concept is specially adapted to power applications, which need extremely good thermal conduction and electrical isolation, but also emi-save control and overload protection. the features of infineon trenchstop ? igbts and emcon? diodes are combined with a new optimized infineon soi gate driver for excellent electrical performance. system configuration ? 3 halfbridges with trenchstop ? igbt & fw- emcon? diodes ? 3 soi gate driver ? bootstrap diodes for high side supply ? integrated 100nf bootstrap capacitance ? temperature sensor, passive components for adaptions ? isolated heatsink ? creepage distance 3.1mm
cipos? IKCS22F60AA, ikcs22f60ab preliminary data sheet 5/17 rev. 1.2, sept. 2007 internal electrical schematic /hin1 /hin2 /hin3 /lin1 /lin2 /lin3 vcc rts vss (23) /lin3 (20) /lin2 (19) /lin1 (18) /hin3 (17) /hin2 (16) /hin1 (15) vdd (22) vb1 (7) vb2 (4) vb3 (1) vrw (14) vrv (13) vru (12) w, vs3 (2) v, vs2 (5) u, vs1 (8) v+ (10) en (24) driver-ic itrip (21) rbs r c2 c1 cbsh1 cbsh2 cbsh3 rh1 rl1 rl2 rh2 rl3 rh3 see table for integrated components dbs1- dbs3 tr1, u-hs d1 tr2, u-ls d2 tr3, v-hs d3 tr4, v-ls d4 tr5, w-hs d5 tr6, w-ls d6 figure 1: internal schematic
cipos? IKCS22F60AA, ikcs22f60ab preliminary data sheet 6/17 rev. 1.2, sept. 2007 pin assignment pin number pin name pin description 1 vb3 high side floating ic supply voltage 2 w,vs3 motor output w, high side floating ic supply offset voltage 3 n.a. none 4 vb2 high side floating ic supply voltage 5 v,vs2 motor output v, high side floating ic supply offset voltage 6 n.a. none 7 vb1 high side floating ic supply voltage 8 u,vs1 motor output u, high side floating ic supply offset voltage 9 n.a. none 10 v+ positive bus input voltage 11 n.a. none 12 vru low side emitter 13 vrv low side emitter 14 vrw low side emitter 15 /hin1 input gate driver high side 1/u 16 /hin2 input gate driver high side 2/v 17 /hin3 input gate driver high side 3/w 18 /lin1 input gate driver low side 1/u 19 /lin2 input gate driver low side 2/v 20 /lin3 input gate driver low side 3/w 21 itrip input overcurrent shutdown 22 vdd module control supply 23 vss module negative supply 24 en input logic enable, output temperature monitoring pin description /hin1,2,3 and /lin1,2,3 (low side and high side control pins, pin 15 - 20) these pins are active low and they are responsible for the control of the integrated igbt the schmitt-trigger input threshold of them are such to guarantee lsttl and cmos compatibility down to 3.3v controller outputs. pull-up resistor of about 75 kohm is internally provided to pre-bias inputs during supply start-up and a zener clamp is provided for pin protection purposes. input schmitt-trigger and noise filter provide beneficial noise rejection to short input pulses. it is recommended for proper work of cipos? not to provide input pulse-width lower than 1us. the integrated gate drive provides additionally a shoot through prevention capability which avoids the simultaneous on-state of two gate drivers of the same leg (i.e. ho1 and lo1, ho2 and lo2, ho3 and lo3). a minimum deadtime insertion of typ 325ns is also provided, in order to reduce cross-conduction of the external power switches. figure 2: input pin structure
cipos? IKCS22F60AA, ikcs22f60ab preliminary data sheet 7/17 rev. 1.2, sept. 2007 en (enable, pin 24) the signal applied to pin en controls directly the output stages. all outputs are set to low, if en is at low logic level. the internal structure of the pin is the same as figure 2 made exception of the switching levels of the schmitt-trigger, which are here v en,th+ = 2.1 v and v en,th- = 1.32 v. the typical propagation delay time is t en = 700 ns. figure 3: internal circuit at pin en this pin may also be used for reading out the temperature close to the gate drive ic. please refer to section ?integrated components? for the specification of the integrated parts. itrip (over-current detection function, pin 21) cipos? provides an over-current detection function by connecting the itrip input with the motor current feedback. the itrip comparator threshold (typ 0.45v) is referenced to vss ground. a input noise filter (typ: t itripmin = 225ns) prevents the driver to detect false over-current events. over-current detection generates a hard shut down of all outputs of the gate driver after the shutdown propagation delay of typically 690ns. the fault-clear time is set to typically to 2ms. vdd, vss (control side supply and reference, pin 22, 23) vdd is the low side supply and it provides power both to input logic and to low side output power stage. input logic is referenced to vss ground as well as the under-voltage detection circuit. the under-voltage circuit enables the device to operate at power on when a supply voltage of at least a typical voltage of v dduv+ = 11.9 v is at least present. the ic shuts down all the gate drivers power outputs, when the vcc supply voltage is below v dduv- = 10.3 v. this prevents the external power switches from critically low gate voltage levels during on-state and therefore from excessive power dissipation. vb1,2,3 and vs1,2,3 (high side supplies, pin 1, 2, 4, 5, 7, 8) vb to vs is the high side supply voltage. the high side circuit can float with respect to vss following the external high side power device emitter/source voltage. due to the low power consumption, the floating driver stage is supplied by an integrated bootstrap circuit connected to vdd. this includes also integrated bootstrap capacitors of 100 nf at each floating supply, which are located very close to the gate drive circuit. the under-voltage detection operates with a rising supply threshold of typical v bsuv+ = 11.9 v and a falling threshold of v dduv- = 10.3 v according to figure 4. vs1,2,3 provide a high robustness against negative voltage in respect of vss of -50 v. this ensures very stable designs even under rough conditions. vru, vrv, vrw (low side emitter, pin 12, 13, 14) the low side emitters are available for current measurements of each phase leg. it is recommended to keep the connection to pin vss as short as possible in order to avoid unnecessary inductive voltage drops. v+ (positive bus input voltage, pin 10) the high side igbt are connected to the bus voltage. it is recommended, that the bus voltage does not exceed 500 v. figure 4: operating states
cipos? IKCS22F60AA, ikcs22f60ab preliminary data sheet 8/17 rev. 1.2, sept. 2007 absolute maximum ratings (t c = 25c, if not stated otherwise) module section value unit description condition symbol min max storage temperature range t stg -40 125 c operating temperature control pcb 1 t pcb - 125 c solder temperature wave soldering, 1.6mm (0.063in.) from case for 10s t sol - 260 c insulation test voltage rms, f=50hz, t =1min v isol 2500 - v mounting torque m3 screw and washer m s - 0.6 nm mounting pressure on surface package flat on mounting surface n mc - 150 n/mm2 creepage distance d s 3.1 - mm igbt and diode section value unit description condition symbol min max collector-emitter breakdown voltage 2 v ge =0v, i c = 0.25ma, t p < 250ns v (br)ces 600 - v dc output current t c = 25c,t vj < 150c t c = 80c,t vj < 150c i u , i v , i w -22 -15 22 15 a repetitive peak collector current t p limited by t vjmax i u , i v , i w -45 45 a short circuit withstand time 3 v dd = 15v,v dc 400v, t j 150 c t sc - 5 s power dissipation per igbt t c = 25c p tot - 59 w operating junction temperature range igbt diode t vji t vjd -40 -40 150 150 c 1 monitored by pin 24 2 for static operation with biased high-side vs is reduced by 50v. 3 allowed number of short circuits: <1000; time between short circuits: >1s.
cipos? IKCS22F60AA, ikcs22f60ab preliminary data sheet 9/17 rev. 1.2, sept. 2007 value description condition symbol min typ max unit single igbt thermal resistance, junction-case r thjc - - 2.1 single diode thermal resistance, junction-case r thjcd - - 3.0 k/w control section value description condition symbol min max unit module supply voltage v dd -1 20 v high side floating supply voltage (vb vs. vs) v bs -1 20 high side floating ic supply offset voltage t p < 250ns t p 250ns t p < 500ns t p 500ns v s1,2,3 - - vdd-vbs-50 vdd-vbs-6 600 550 - - v input voltage lin, hin, en, itrip v in -1 10 v operating junction temperature 1 t j,ic - 125 max. switching frequency f pwm - 20 khz recommended operation conditions all voltages are absolute voltages referenced to v ss -potential unless otherwise specified. value description symbol min max unit high side floating supply offset voltage v s -3 500 high side floating supply voltage (v b vs. v s ) v bs 12.5 17.5 high side output voltage (v ho vs. v s ) v ho 0 v bs low side power supply v dd 12.5 17.5 logic input voltages lin,hin,en,itrip v in 0 5 v 1 monitored by pin 24
cipos? IKCS22F60AA, ikcs22f60ab preliminary data sheet 10/17 rev. 1.2, sept. 2007 static parameters (t c = 25c, if not stated otherwise) value description condition symbol min typ max unit collector-emitter saturation voltage v dd = 15v, i out = +/- 15a 25c 150c v ce(sat) - - 1.65 tbd 2.15 v diode forward voltage v dd = 0v, i out = +/- 15a 25c 150c v f - - 1.75 tbd 2.05 v zero gate voltage collector current 1 v ce = 600v, vge = 0v t p < 250ns t j = 25 c t j = 150 c i ces - - - - tbd tbd a short circuit collector current 1 v dd = 15v, t sc 5s v cc = 400v, t j 150c i c(sc) - 95 - a logic "0" input voltage (lin,hin) v ih 1.7 2.1 2.4 v logic "1" input voltage (lin,hin) v il 0.7 0.9 1.1 v en positive going threshold v en,th+ 1.9 2.1 2.3 v en negative going threshold v en,th- 1.1 1.32 1.5 v itrip positive going threshold v it,th+ 360 450 540 mv itrip input hysteresis v it,hys 60 85 - mv v dd and v bs supply undervoltage positive going threshold v dduv+ v bsuv+ 11.0 12.0 12.8 v v dd and v bs supply undervoltage negative going threshold v dduv- v bsuv- 9.5 10.3 11.0 v v cc and v bs supply undervoltage lockout hysteresis v dduvh v bsuvh 1.2 1.6 - v input clamp voltage (/hin, /lin, en, itrip) v inclamp 9.0 10.1 13.0 v quiescent vb x supply current (vb x only) v in = low i qb - 300 550 a quiescent v dd supply current (vdd only) v in = float i qdd - 2.1 3.0 ma input bias current v in = 5v i in+ - 43 100 a input bias current v in = 0v i in - - 100 200 a itrip input bias current v itrip = 5v i itrip+ - 62 120 a en input bias current v en = 5v i en+ - 62 120 a leakage current of high side v s = 550v, t j,ic = 125 c i lvs - 30 - a 1 allowed number of short circuits: <1000; time between short circuits: >1s.
cipos? IKCS22F60AA, ikcs22f60ab preliminary data sheet 11/17 rev. 1.2, sept. 2007 dynamic parameters (t c = 25c, if not stated otherwise) value description condition symbol min typ max unit turn-on propagation delay v lin,hin = 0v; i out = 15a, v dc = 300v t d(on) - 656 - ns turn-on rise time i out = 15a, v dc = 300v v lin,hin = 5v t r - 40 - ns turn-off propagation delay v lin,hin = 5v; i out = 15a, v dc = 300v t d(off) - 1051 - ns turn-on fall time i out = 15a, v dc = 300v v lin,hin = 0v t f - 32 - ns shutdown propagation delay enable v en = 0v, i u , i v , i w = 15a t en - tbd - ns shutdown propagation delay itrip v itrip = 1v, i u , i v , i w = 15a t itrip - tbd - ns input filter time itrip v itrip = 1v t itripmin 155 225 380 ns input filter time at lin for turn on and off and input filter time at hin for turn on only v lin,hin = 0 v & 5v t filin 120 270 - ns input filter time at hin for turn off v hin = 5v t filin1 - 200 - ns input filter time at hin for turn off v hin = 5 v t filin2 - 350 - ns input filter time en t filen 300 430 - ns fault clear time after itrip-fault v lin,hin = 0 v & 5v v itrip = 0 v t fltclr - 4 - ms min. deadtime between low side and high side dt pwm 1.5 - - s deadtime of gate drive circuit dt ic 325 ns igbt turn-on energy (includes reverse recovery of diode) i out = 15a, v dc = 300v t vj = 25c t vj = 150c e on - - 700 846 - - j igbt turn-off energy i out = 15a, v dc = 300v t vj = 25c t vj = 150c e off - - 355 431 - - j diode recovery energy i out = 15a, v dc = 300v t vj = 25c t vj = 150c e rec - - 72 148 - - j
cipos? IKCS22F60AA, ikcs22f60ab preliminary data sheet 12/17 rev. 1.2, sept. 2007 integrated components value description condition symbol 1 min typ max unit resistor(tol.: 5 %) rbs - 10 - ? resistor (tol.: 5 %) r - 24 - ntc resistor (tol.: 5 %) t ntc = 25c rts - 100 - k ? b-constant of ntc (tol.: 3%) t ntc = 25c b25 - 4250 - k bootstrap diode forward voltage i fdbs = 100ma v fdbs - 1.9 - v capacitor c1 - 100 - capacitor c2 - 2.2 - bootstrap capacitor cbsh x - 100 - nf gate resistor (tol.: 5%) rl x - 30 - ? circuit of a typical application 1 symbols according to figure 1
cipos? IKCS22F60AA, ikcs22f60ab preliminary data sheet 13/17 rev. 1.2, sept. 2007 t, switching times 0a 10a 20a 30a 40a 10ns 100ns 1000ns t f t d(on) t r t d(off) t, switching times 25c 50c 75c 100c 125c 100ns 1000ns t f t d(on) t r t d(off) i c , collector current t vj , junction temperature figure 5. typical switching times as a function of collector current (inductive load, t j =150c, v ce = 300v, v dd = 15v dynamic test circuit in figure a) figure 6. typical switching times as a function of junction temperature (inductive load, v ce = 300v, v dd = 15v, i c = 15a dynamic test circuit in figure a) e , switching energy losses 0a 5a 10a 15a 20a 25a 30a 35a 40a 0mj 1mj 2mj 3mj 4mj 5mj 6mj 7mj e on e rec e off e , switching energy losses 25c 50c 75c 100c 125c 0.00mj 0.20mj 0.40mj 0.60mj 0.80mj e rec e on e off i c , collector current t vj , junction temperature figure 7. typical switching energy losses as a function of collector current (inductive load, t j = 150c, v ce = 300v, v dd = 15v dynamic test circuit in figure a) figure 8. typical switching energy losses as a function of junction temperature (inductive load, v ce = 300v, v dd = 15v, i c = 15a dynamic test circuit in figure a)
cipos? IKCS22F60AA, ikcs22f60ab preliminary data sheet 14/17 rev. 1.2, sept. 2007 test circuits figure a: dynamic test circuit leakage inductance l =180nh stray capacitance c =39pf ? = erec t f d dt i v erec 0 figure b: definition of diodes switching characteristics figure c: definition of enable and itirp propagation delay ? = eoff t cx cex dt i v eoff 0 ? = eon t cx cex dt i v eon 0 figure d: switching times definiti on and switching energy definition
cipos? IKCS22F60AA, ikcs22f60ab preliminary data sheet 15/17 rev. 1.2, sept. 2007 figure e: short pulse suppression lin hin lin ho lo high low on t filin t filin off on off lo
cipos? IKCS22F60AA, ikcs22f60ab preliminary data sheet 16/17 rev. 1.2, sept. 2007 package outline IKCS22F60AA value description condition symbol min typ max unit weight m p - 17 - g
cipos? IKCS22F60AA, ikcs22f60ab preliminary data sheet 17/17 rev. 1.2, sept. 2007 package outline ikcs22f60ab

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